VBsemi Elec NCE60P25K-VB is a NCE60P25K-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 25A 53mΩ@10V,10A 38.5W 3V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 25A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 53mΩ@10V,10A
- Power Dissipation (Pd): 38.5W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 90pF@25V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 1.14nF@25V
- Total Gate Charge (Qg@Vgs): 26nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.48 grams.
More on NCE60P25K-VB
Full Specifications of NCE60P25K-VB
| Model Number | NCE60P25K-VB |
| Model Name | VBsemi Elec NCE60P25K-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 60V 25A 53mΩ@10V,10A 38.5W 3V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.480 grams / 0.016932 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 25A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 53mΩ@10V,10A |
| Power Dissipation (Pd) | 38.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF@25V |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 1.14nF@25V |
| Total Gate Charge (Qg@Vgs) | 26nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |