NCE80H11D-VB by VBsemi Elec – Specifications

VBsemi Elec NCE80H11D-VB is a NCE80H11D-VB from VBsemi Elec, part of the MOSFETs. It is designed for 80V 6mΩ@10V 3.7V 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.7V
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.65 grams.

More on NCE80H11D-VB

Full Specifications of NCE80H11D-VB

Model NumberNCE80H11D-VB
Model NameVBsemi Elec NCE80H11D-VB
CategoryMOSFETs
BrandVBsemi Elec
Description80V 6mΩ@10V 3.7V 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.650 grams / 0.058202 oz
Package / CaseTO-263
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Drain Source On Resistance (RDS(on)@Vgs,Id)6mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)3.7V
Type1PCSNChannel

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