VBsemi Elec NCE80H11D-VB is a NCE80H11D-VB from VBsemi Elec, part of the MOSFETs. It is designed for 80V 6mΩ@10V 3.7V 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 80V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.7V
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.65 grams.
More on NCE80H11D-VB
Full Specifications of NCE80H11D-VB
Model Number | NCE80H11D-VB |
Model Name | VBsemi Elec NCE80H11D-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 80V 6mΩ@10V 3.7V 1PCSNChannel TO-263 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.650 grams / 0.058202 oz |
Package / Case | TO-263 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 80V |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 6mΩ@10V |
Gate Threshold Voltage (Vgs(th)@Id) | 3.7V |
Type | 1PCSNChannel |
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