NDP6020P-VB by VBsemi Elec – Specifications

VBsemi Elec NDP6020P-VB is a NDP6020P-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 60.5A 8mΩ@10V,10A 5W 2.5V@250uA 1PCSPChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 60.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,10A
  • Power Dissipation (Pd): 5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 390pF@15V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.55nF@15V
  • Total Gate Charge (Qg@Vgs): 57nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 4 grams.

Full Specifications of NDP6020P-VB

Model NumberNDP6020P-VB
Model NameVBsemi Elec NDP6020P-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 60.5A 8mΩ@10V,10A 5W 2.5V@250uA 1PCSPChannel TO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:4.000 grams / 0.141096 oz
Package / CaseTO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)60.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@10V,10A
Power Dissipation (Pd)5W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)390pF@15V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.55nF@15V
Total Gate Charge (Qg@Vgs)57nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare VBsemi Elec - NDP6020P-VB With Other 200 Models

Related Models - NDP6020P-VB Alternative

Scroll to Top