VBsemi Elec NDP6020P-VB is a NDP6020P-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 60.5A 8mΩ@10V,10A 5W 2.5V@250uA 1PCSPChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 60.5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,10A
- Power Dissipation (Pd): 5W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 390pF@15V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 2.55nF@15V
- Total Gate Charge (Qg@Vgs): 57nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 4 grams.
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Full Specifications of NDP6020P-VB
Model Number | NDP6020P-VB |
Model Name | VBsemi Elec NDP6020P-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 30V 60.5A 8mΩ@10V,10A 5W 2.5V@250uA 1PCSPChannel TO-220AB-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 4.000 grams / 0.141096 oz |
Package / Case | TO-220AB-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 60.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 8mΩ@10V,10A |
Power Dissipation (Pd) | 5W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 390pF@15V |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 2.55nF@15V |
Total Gate Charge (Qg@Vgs) | 57nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |