VBsemi Elec NDS356AP-VB is a NDS356AP-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 5.6A 46mΩ@10V,4.4A 2.5W 2V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 5.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 46mΩ@10V,4.4A
- Power Dissipation (Pd): 2.5W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 130pF@15V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 1.295nF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.044 grams.
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Full Specifications of NDS356AP-VB
Model Number | NDS356AP-VB |
Model Name | VBsemi Elec NDS356AP-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 30V 5.6A 46mΩ@10V,4.4A 2.5W 2V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.044 grams / 0.001552 oz |
Package / Case | SOT-23 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 5.6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 46mΩ@10V,4.4A |
Power Dissipation (Pd) | 2.5W |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 130pF@15V |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 1.295nF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |