VBsemi Elec NDT454P-VB is a NDT454P-VB from VBsemi Elec, part of the MOSFETs. It is designed for 35V 6.2A 40mΩ@10V,5A 4.2W 1.8V@250uA 1PCSPChannel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 35V
- Continuous Drain Current (Id): 6.2A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 40mΩ@10V,5A
- Power Dissipation (Pd): 4.2W
- Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 95pF@20V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 970pF@20V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.176 grams.
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Full Specifications of NDT454P-VB
Model Number | NDT454P-VB |
Model Name | VBsemi Elec NDT454P-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 35V 6.2A 40mΩ@10V,5A 4.2W 1.8V@250uA 1PCSPChannel SOT-223-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.176 grams / 0.006208 oz |
Package / Case | SOT-223-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 35V |
Continuous Drain Current (Id) | 6.2A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 40mΩ@10V,5A |
Power Dissipation (Pd) | 4.2W |
Gate Threshold Voltage (Vgs(th)@Id) | 1.8V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 95pF@20V |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 970pF@20V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |