NDT456P-VB by VBsemi Elec – Specifications

VBsemi Elec NDT456P-VB is a NDT456P-VB from VBsemi Elec, part of the MOSFETs. It is designed for 35V 6.2A 40mΩ@10V,5A 4.2W 1.8V@250uA 1PCSPChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 35V
  • Continuous Drain Current (Id): 6.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 40mΩ@10V,5A
  • Power Dissipation (Pd): 4.2W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 95pF@20V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 970pF@20V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.17 grams.

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Full Specifications of NDT456P-VB

Model NumberNDT456P-VB
Model NameVBsemi Elec NDT456P-VB
CategoryMOSFETs
BrandVBsemi Elec
Description35V 6.2A 40mΩ@10V,5A 4.2W 1.8V@250uA 1PCSPChannel SOT-223-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.170 grams / 0.005997 oz
Package / CaseSOT-223-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)35V
Continuous Drain Current (Id)6.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)40mΩ@10V,5A
Power Dissipation (Pd)4.2W
Gate Threshold Voltage (Vgs(th)@Id)1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)95pF@20V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)970pF@20V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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