NIF5002NT1G-VB by VBsemi Elec – Specifications

VBsemi Elec NIF5002NT1G-VB is a NIF5002NT1G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 4.5A 76mΩ@10V,4A 4W 2.5V@250uA 1PCSNChannel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 4.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 76mΩ@10V,4A
  • Power Dissipation (Pd): 4W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 100pF@30V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 810pF@30V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.29 grams.

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Full Specifications of NIF5002NT1G-VB

Model NumberNIF5002NT1G-VB
Model NameVBsemi Elec NIF5002NT1G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 4.5A 76mΩ@10V,4A 4W 2.5V@250uA 1PCSNChannel SOT-223-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.290 grams / 0.010229 oz
Package / CaseSOT-223-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)76mΩ@10V,4A
Power Dissipation (Pd)4W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)100pF@30V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)810pF@30V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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