NTB60N06G-VB by VBsemi Elec – Specifications

VBsemi Elec NTB60N06G-VB is a NTB60N06G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 60A 10mΩ@10V,20A 136W 2V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 60A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,20A
• Power Dissipation (Pd): 136W
• Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
• Reverse Transfer Capacitance (Crss@Vds): 225pF@25V
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 2.65nF@25V
• Total Gate Charge (Qg@Vgs): 47nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.2 grams.