NTB60N06G-VB by VBsemi Elec – Specifications

VBsemi Elec NTB60N06G-VB is a NTB60N06G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 60A 10mΩ@10V,20A 136W 2V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,20A
  • Power Dissipation (Pd): 136W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 225pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.65nF@25V
  • Total Gate Charge (Qg@Vgs): 47nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.2 grams.

Full Specifications of NTB60N06G-VB

Model NumberNTB60N06G-VB
Model NameVBsemi Elec NTB60N06G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 60A 10mΩ@10V,20A 136W 2V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.200 grams / 0.077603 oz
Package / CaseTO-263-2
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@10V,20A
Power Dissipation (Pd)136W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)225pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.65nF@25V
Total Gate Charge (Qg@Vgs)47nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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