VBsemi Elec NTB60N06G-VB is a NTB60N06G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 60A 10mΩ@10V,20A 136W 2V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 60A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,20A
- Power Dissipation (Pd): 136W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 225pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.65nF@25V
- Total Gate Charge (Qg@Vgs): 47nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.2 grams.
More on NTB60N06G-VB
Full Specifications of NTB60N06G-VB
Model Number | NTB60N06G-VB |
Model Name | VBsemi Elec NTB60N06G-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 60V 60A 10mΩ@10V,20A 136W 2V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.200 grams / 0.077603 oz |
Package / Case | TO-263-2 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 60A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@10V,20A |
Power Dissipation (Pd) | 136W |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 225pF@25V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.65nF@25V |
Total Gate Charge (Qg@Vgs) | 47nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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