NTF2955PT1G-VB by VBsemi Elec – Specifications

VBsemi Elec NTF2955PT1G-VB is a NTF2955PT1G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 7A 55mΩ@10V,3A 10.4W 2.5V@250uA 1PCSPChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 55mΩ@10V,3A
  • Power Dissipation (Pd): 10.4W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 150pF@25V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.5nF@25V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.17 grams.

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Full Specifications of NTF2955PT1G-VB

Model NumberNTF2955PT1G-VB
Model NameVBsemi Elec NTF2955PT1G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 7A 55mΩ@10V,3A 10.4W 2.5V@250uA 1PCSPChannel SOT-223-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.170 grams / 0.005997 oz
Package / CaseSOT-223-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)7A
Drain Source On Resistance (RDS(on)@Vgs,Id)55mΩ@10V,3A
Power Dissipation (Pd)10.4W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)150pF@25V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.5nF@25V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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