NTGS3136PT1G-VB by VBsemi Elec – Specifications

VBsemi Elec NTGS3136PT1G-VB is a NTGS3136PT1G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 4.8A 49mΩ@10V,4.8A 1PCSPChannel TSOP-6-1.5mm MOSFETs ROHS. This product comes in a TSOP-6-1.5mm package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 49mΩ@10V,4.8A
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.052 grams.

More on NTGS3136PT1G-VB

Full Specifications of NTGS3136PT1G-VB

Model NumberNTGS3136PT1G-VB
Model NameVBsemi Elec NTGS3136PT1G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 4.8A 49mΩ@10V,4.8A 1PCSPChannel TSOP-6-1.5mm MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.052 grams / 0.001834 oz
Package / CaseTSOP-6-1.5mm
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)49mΩ@10V,4.8A
Power Dissipation (Pd)-
Gate Threshold Voltage (Vgs(th)@Id)-
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-

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