NTMD3P03R2G-VB by VBsemi Elec – Specifications

VBsemi Elec NTMD3P03R2G-VB is a NTMD3P03R2G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 7.3A 35mΩ@10V,6.3A 5W 3V@250uA 2 P-Channel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 7.3A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@10V,6.3A
• Power Dissipation (Pd): 5W
• Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
• Reverse Transfer Capacitance (Crss@Vds): 185pF@15V
• Type: 2 P-Channel
• Input Capacitance (Ciss@Vds): 1.35nF@15V
• Total Gate Charge (Qg@Vgs): [email protected]
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.137 grams.