NTMS10P02R2G-VB by VBsemi Elec – Specifications

VBsemi Elec NTMS10P02R2G-VB is a NTMS10P02R2G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 20V 13A 15mΩ@4.5V,5.6A 19W 1.2V@250uA 1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 13A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 15mΩ@4.5V,5.6A
  • Power Dissipation (Pd): 19W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Type: 1PCSPChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.135 grams.

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Full Specifications of NTMS10P02R2G-VB

Model NumberNTMS10P02R2G-VB
Model NameVBsemi Elec NTMS10P02R2G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description20V 13A 15mΩ@4.5V,5.6A 19W 1.2V@250uA 1PCSPChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.135 grams / 0.004762 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)13A
Drain Source On Resistance (RDS(on)@Vgs,Id)15mΩ@4.5V,5.6A
Power Dissipation (Pd)19W
Gate Threshold Voltage (Vgs(th)@Id)1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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