VBsemi Elec NTP60N06-VB is a NTP60N06-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 60A 11mΩ@10V,20A 136W 3V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 60A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,20A
- Power Dissipation (Pd): 136W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 325pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.65nF@25V
- Total Gate Charge (Qg@Vgs): 47nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 4.5 grams.
More on NTP60N06-VB
Full Specifications of NTP60N06-VB
| Model Number | NTP60N06-VB |
| Model Name | VBsemi Elec NTP60N06-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 60V 60A 11mΩ@10V,20A 136W 3V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 4.500 grams / 0.158733 oz |
| Package / Case | TO-220AB-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 60A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 11mΩ@10V,20A |
| Power Dissipation (Pd) | 136W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 325pF@25V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 3.65nF@25V |
| Total Gate Charge (Qg@Vgs) | 47nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |