NTP60N06-VB by VBsemi Elec – Specifications

VBsemi Elec NTP60N06-VB is a NTP60N06-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 60A 11mΩ@10V,20A 136W 3V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,20A
  • Power Dissipation (Pd): 136W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 325pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.65nF@25V
  • Total Gate Charge (Qg@Vgs): 47nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 4.5 grams.

Full Specifications of NTP60N06-VB

Model NumberNTP60N06-VB
Model NameVBsemi Elec NTP60N06-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 60A 11mΩ@10V,20A 136W 3V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:4.500 grams / 0.158733 oz
Package / CaseTO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)11mΩ@10V,20A
Power Dissipation (Pd)136W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)325pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.65nF@25V
Total Gate Charge (Qg@Vgs)47nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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