NTR4502PT1G-VB by VBsemi Elec – Specifications

VBsemi Elec NTR4502PT1G-VB is a NTR4502PT1G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 5.6A 46mΩ@10V,4.4A 2.5W 2V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 5.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 46mΩ@10V,4.4A
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 130pF@15V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.295nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.054 grams.

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Full Specifications of NTR4502PT1G-VB

Model NumberNTR4502PT1G-VB
Model NameVBsemi Elec NTR4502PT1G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 5.6A 46mΩ@10V,4.4A 2.5W 2V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.054 grams / 0.001905 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)5.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)46mΩ@10V,4.4A
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)130pF@15V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.295nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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