NTS4101PT1G-VB by VBsemi Elec – Specifications

VBsemi Elec NTS4101PT1G-VB is a NTS4101PT1G-VB from VBsemi Elec, part of the MOSFETs. It is designed for 20V 3.1A 80mΩ@4.5V,1.4A 500mW 1.5V@250uA 1PCSPChannel SC-70-3 MOSFETs ROHS. This product comes in a SC-70-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 3.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@4.5V,1.4A
  • Power Dissipation (Pd): 500mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 44pF@10V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 272pF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.044 grams.

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Full Specifications of NTS4101PT1G-VB

Model NumberNTS4101PT1G-VB
Model NameVBsemi Elec NTS4101PT1G-VB
CategoryMOSFETs
BrandVBsemi Elec
Description20V 3.1A 80mΩ@4.5V,1.4A 500mW 1.5V@250uA 1PCSPChannel SC-70-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.044 grams / 0.001552 oz
Package / CaseSC-70-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)3.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)80mΩ@4.5V,1.4A
Power Dissipation (Pd)500mW
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)44pF@10V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)272pF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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