P5504EDG-VB by VBsemi Elec – Specifications

VBsemi Elec P5504EDG-VB is a P5504EDG-VB from VBsemi Elec, part of the MOSFETs. It is designed for 40V 50A 12mΩ@10V,17A 3W 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 50A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,17A
  • Power Dissipation (Pd): 3W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 352pF@25V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.872nF@25V
  • Total Gate Charge (Qg@Vgs): 60nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.379 grams.

Full Specifications of P5504EDG-VB

Model NumberP5504EDG-VB
Model NameVBsemi Elec P5504EDG-VB
CategoryMOSFETs
BrandVBsemi Elec
Description40V 50A 12mΩ@10V,17A 3W 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.379 grams / 0.013369 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)50A
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@10V,17A
Power Dissipation (Pd)3W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)352pF@25V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.872nF@25V
Total Gate Charge (Qg@Vgs)60nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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