P80NF55-08-VB by VBsemi Elec – Specifications

VBsemi Elec P80NF55-08-VB is a P80NF55-08-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 120A 5mΩ@10V,20A 136W 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5mΩ@10V,20A
  • Power Dissipation (Pd): 136W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 325pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.65nF@25V
  • Total Gate Charge (Qg@Vgs): 47nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.7 grams.

More on P80NF55-08-VB

Full Specifications of P80NF55-08-VB

Model NumberP80NF55-08-VB
Model NameVBsemi Elec P80NF55-08-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 120A 5mΩ@10V,20A 136W 4V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.700 grams / 0.09524 oz
Package / CaseTO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)5mΩ@10V,20A
Power Dissipation (Pd)136W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)325pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.65nF@25V
Total Gate Charge (Qg@Vgs)47nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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