PB210BD-VB by VBsemi Elec – Specifications

VBsemi Elec PB210BD-VB is a PB210BD-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 15A 114mΩ@10V,3A 96W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 15A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 114mΩ@10V,3A
  • Power Dissipation (Pd): 96W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 60pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 950pF@25V
  • Total Gate Charge (Qg@Vgs): 24nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.42 grams.

More on PB210BD-VB

Full Specifications of PB210BD-VB

Model NumberPB210BD-VB
Model NameVBsemi Elec PB210BD-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 15A 114mΩ@10V,3A 96W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.420 grams / 0.014815 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)15A
Drain Source On Resistance (RDS(on)@Vgs,Id)114mΩ@10V,3A
Power Dissipation (Pd)96W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)60pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)950pF@25V
Total Gate Charge (Qg@Vgs)24nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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