PSMN022-30PL-VB by VBsemi Elec – Specifications

VBsemi Elec PSMN022-30PL-VB is a PSMN022-30PL-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 55A 10mΩ@10V,28.8A 120W 2.5V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 55A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,28.8A
  • Power Dissipation (Pd): 120W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 370pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.201nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.74 grams.

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Full Specifications of PSMN022-30PL-VB

Model NumberPSMN022-30PL-VB
Model NameVBsemi Elec PSMN022-30PL-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 55A 10mΩ@10V,28.8A 120W 2.5V@250uA 1PCSNChannel TO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.740 grams / 0.096651 oz
Package / CaseTO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)55A
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@10V,28.8A
Power Dissipation (Pd)120W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)370pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.201nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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