VBsemi Elec QM3006S-VB is a QM3006S-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 18A 4mΩ@10V,11A 4.5W 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 18A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@10V,11A
- Power Dissipation (Pd): 4.5W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 73pF@15V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 820pF@15V
- Total Gate Charge (Qg@Vgs): 6.8nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.132 grams.
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Full Specifications of QM3006S-VB
Model Number | QM3006S-VB |
Model Name | VBsemi Elec QM3006S-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 30V 18A 4mΩ@10V,11A 4.5W 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.132 grams / 0.004656 oz |
Package / Case | SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 18A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 4mΩ@10V,11A |
Power Dissipation (Pd) | 4.5W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 73pF@15V |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 820pF@15V |
Total Gate Charge (Qg@Vgs) | 6.8nC@5V |
Operating Temperature | -55℃~+150℃@(Tj) |