QM3016M6-VB by VBsemi Elec – Specifications

VBsemi Elec QM3016M6-VB is a QM3016M6-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 100A 1.84mΩ@10V,32A 250W 2.5V@250uA 1PCSNChannel PDFN-8(5.2x6.2) MOSFETs ROHS. This product comes in a PDFN-8(5.2x6.2) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.84mΩ@10V,32A
  • Power Dissipation (Pd): 250W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): [email protected]
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.545 grams.

Full Specifications of QM3016M6-VB

Model NumberQM3016M6-VB
Model NameVBsemi Elec QM3016M6-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 100A 1.84mΩ@10V,32A 250W 2.5V@250uA 1PCSNChannel PDFN-8(5.2x6.2) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.545 grams / 0.054498 oz
Package / CasePDFN-8(5.2x6.2)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.84mΩ@10V,32A
Power Dissipation (Pd)250W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)[email protected]
Type1PCSNChannel
Input Capacitance (Ciss@Vds)[email protected]
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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