QM4002AD-VB by VBsemi Elec – Specifications

VBsemi Elec QM4002AD-VB is a QM4002AD-VB from VBsemi Elec, part of the MOSFETs. It is designed for 40V 55A 12mΩ@10V,38.8A 100W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 55A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,38.8A
  • Power Dissipation (Pd): 100W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 570pF@15V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.801nF@15V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.394 grams.

More on QM4002AD-VB

Full Specifications of QM4002AD-VB

Model NumberQM4002AD-VB
Model NameVBsemi Elec QM4002AD-VB
CategoryMOSFETs
BrandVBsemi Elec
Description40V 55A 12mΩ@10V,38.8A 100W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.394 grams / 0.013898 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)55A
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@10V,38.8A
Power Dissipation (Pd)100W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)570pF@15V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.801nF@15V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

Compare VBsemi Elec - QM4002AD-VB With Other 200 Models

Related Models - QM4002AD-VB Alternative

Scroll to Top