VBsemi Elec QM6015S-VB is a QM6015S-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 10A 16mΩ@10V,30A 104.2W 3V@250uA 1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 10A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@10V,30A
- Power Dissipation (Pd): 104.2W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 290pF@25V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 3.5nF@25V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.262 grams.
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Full Specifications of QM6015S-VB
Model Number | QM6015S-VB |
Model Name | VBsemi Elec QM6015S-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 60V 10A 16mΩ@10V,30A 104.2W 3V@250uA 1PCSPChannel SO-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.262 grams / 0.009242 oz |
Package / Case | SO-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 10A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 16mΩ@10V,30A |
Power Dissipation (Pd) | 104.2W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 290pF@25V |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 3.5nF@25V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |