RFD14N05LSM-VB by VBsemi Elec – Specifications

VBsemi Elec RFD14N05LSM-VB is a RFD14N05LSM-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 16.9A 73mΩ@10V,6.6A 41.7W 3V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 16.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 73mΩ@10V,6.6A
  • Power Dissipation (Pd): 41.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 40pF@30V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 860pF@30V
  • Total Gate Charge (Qg@Vgs): 19.8nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.38 grams.

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Full Specifications of RFD14N05LSM-VB

Model NumberRFD14N05LSM-VB
Model NameVBsemi Elec RFD14N05LSM-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 16.9A 73mΩ@10V,6.6A 41.7W 3V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.380 grams / 0.013404 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)16.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)73mΩ@10V,6.6A
Power Dissipation (Pd)41.7W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)40pF@30V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)860pF@30V
Total Gate Charge (Qg@Vgs)19.8nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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