RFD15P05SM-VB by VBsemi Elec – Specifications

VBsemi Elec RFD15P05SM-VB is a RFD15P05SM-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 30A 61mΩ@10V,5A 34W 2V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 61mΩ@10V,5A
  • Power Dissipation (Pd): 34W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 100pF@25V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1nF@25V
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.388 grams.

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Full Specifications of RFD15P05SM-VB

Model NumberRFD15P05SM-VB
Model NameVBsemi Elec RFD15P05SM-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 30A 61mΩ@10V,5A 34W 2V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.388 grams / 0.013686 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)61mΩ@10V,5A
Power Dissipation (Pd)34W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)100pF@25V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1nF@25V
Total Gate Charge (Qg@Vgs)10nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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