RFD16N05LSM9A-VB by VBsemi Elec – Specifications

VBsemi Elec RFD16N05LSM9A-VB is a RFD16N05LSM9A-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 35A 25mΩ@10V,15A 100W 2V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 35A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@10V,15A
• Power Dissipation (Pd): 100W
• Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
• Reverse Transfer Capacitance (Crss@Vds): 60pF@25V
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 670pF@25V
• Total Gate Charge (Qg@Vgs): 11nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.467 grams.