VBsemi Elec RFD8P06ESM-VB is a RFD8P06ESM-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 30A 61.1mΩ@10V,5A 34W 2V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 30A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 61.1mΩ@10V,5A
- Power Dissipation (Pd): 34W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 100pF@25V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 1nF@25V
- Total Gate Charge (Qg@Vgs): 10nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.49 grams.
More on RFD8P06ESM-VB
Full Specifications of RFD8P06ESM-VB
| Model Number | RFD8P06ESM-VB |
| Model Name | VBsemi Elec RFD8P06ESM-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 60V 30A 61.1mΩ@10V,5A 34W 2V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.490 grams / 0.017284 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 30A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 61.1mΩ@10V,5A |
| Power Dissipation (Pd) | 34W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF@25V |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 1nF@25V |
| Total Gate Charge (Qg@Vgs) | 10nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |