VBsemi Elec RFP6P08-VB is a RFP6P08-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 18A 167.1mΩ@10V,14A 11.7W 2.5V@250uA 1PCSPChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 18A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 167.1mΩ@10V,14A
- Power Dissipation (Pd): 11.7W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 280pF@20V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 1.765nF@20V
- Total Gate Charge (Qg@Vgs): 67nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.1 grams.
More on RFP6P08-VB
Full Specifications of RFP6P08-VB
| Model Number | RFP6P08-VB |
| Model Name | VBsemi Elec RFP6P08-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 18A 167.1mΩ@10V,14A 11.7W 2.5V@250uA 1PCSPChannel TO-220AB-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.100 grams / 0.074075 oz |
| Package / Case | TO-220AB-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 18A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 167.1mΩ@10V,14A |
| Power Dissipation (Pd) | 11.7W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF@20V |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 1.765nF@20V |
| Total Gate Charge (Qg@Vgs) | 67nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |