RFP6P08-VB by VBsemi Elec – Specifications

VBsemi Elec RFP6P08-VB is a RFP6P08-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 18A 167.1mΩ@10V,14A 11.7W 2.5V@250uA 1PCSPChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 167.1mΩ@10V,14A
  • Power Dissipation (Pd): 11.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 280pF@20V
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 1.765nF@20V
  • Total Gate Charge (Qg@Vgs): 67nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.1 grams.

Full Specifications of RFP6P08-VB

Model NumberRFP6P08-VB
Model NameVBsemi Elec RFP6P08-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 18A 167.1mΩ@10V,14A 11.7W 2.5V@250uA 1PCSPChannel TO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.100 grams / 0.074075 oz
Package / CaseTO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)167.1mΩ@10V,14A
Power Dissipation (Pd)11.7W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)280pF@20V
Type1PCSPChannel
Input Capacitance (Ciss@Vds)1.765nF@20V
Total Gate Charge (Qg@Vgs)67nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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