RJP020N06T100-VB by VBsemi Elec – Specifications

VBsemi Elec RJP020N06T100-VB is a RJP020N06T100-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 7.1A 76mΩ@4.5V,6.3A 6.3W 3V@250uA 1PCSNChannel SOT-89-3 MOSFETs ROHS. This product comes in a SOT-89-3 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 7.1A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 76mΩ@4.5V,6.3A
• Power Dissipation (Pd): 6.3W
• Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
• Reverse Transfer Capacitance (Crss@Vds): 100pF@10V
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 810pF@10V
• Total Gate Charge (Qg@Vgs): [email protected]
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.11 grams.