RYU002N05T306-VB by VBsemi Elec – Specifications

VBsemi Elec RYU002N05T306-VB is a RYU002N05T306-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 300mA 2Ω@10V,500mA 350mW 2.5V@250uA 1PCSNChannel SC-70-3 MOSFETs ROHS. This product comes in a SC-70-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 300mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@10V,500mA
  • Power Dissipation (Pd): 350mW
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 2.5pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 30pF@25V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.042 grams.

Full Specifications of RYU002N05T306-VB

Model NumberRYU002N05T306-VB
Model NameVBsemi Elec RYU002N05T306-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 300mA 2Ω@10V,500mA 350mW 2.5V@250uA 1PCSNChannel SC-70-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.042 grams / 0.001482 oz
Package / CaseSC-70-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)300mA
Drain Source On Resistance (RDS(on)@Vgs,Id)2Ω@10V,500mA
Power Dissipation (Pd)350mW
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)2.5pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)30pF@25V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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