Si1016X-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec Si1016X-T1-GE3-VB is a Si1016X-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 20V 300mΩ@4.5V 300mV 2 N-Channel SC75-6 MOSFETs ROHS. This product comes in a SC75-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 300mΩ@4.5V
  • Gate Threshold Voltage (Vgs(th)@Id): 300mV
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.02 grams.

More on Si1016X-T1-GE3-VB

Full Specifications of Si1016X-T1-GE3-VB

Model NumberSi1016X-T1-GE3-VB
Model NameVBsemi Elec Si1016X-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description20V 300mΩ@4.5V 300mV 2 N-Channel SC75-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.020 grams / 0.000705 oz
Package / CaseSC75-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Drain Source On Resistance (RDS(on)@Vgs,Id)300mΩ@4.5V
Gate Threshold Voltage (Vgs(th)@Id)300mV
Type2 N-Channel

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