SI2301DS-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SI2301DS-T1-GE3-VB is a SI2301DS-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 20V 5A 43mΩ@4.5V,5A 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 43mΩ@4.5V,5A
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.054 grams.

More on SI2301DS-T1-GE3-VB

Full Specifications of SI2301DS-T1-GE3-VB

Model NumberSI2301DS-T1-GE3-VB
Model NameVBsemi Elec SI2301DS-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description20V 5A 43mΩ@4.5V,5A 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.054 grams / 0.001905 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)5A
Drain Source On Resistance (RDS(on)@Vgs,Id)43mΩ@4.5V,5A
Power Dissipation (Pd)-
Gate Threshold Voltage (Vgs(th)@Id)-
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-

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