SI2319DS-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SI2319DS-T1-GE3-VB is a SI2319DS-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 5.6A 55mΩ@10V,4.4A 2.5W 2V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 5.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 55mΩ@10V,4.4A
  • Power Dissipation (Pd): 2.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.054 grams.

More on SI2319DS-T1-GE3-VB

Full Specifications of SI2319DS-T1-GE3-VB

Model NumberSI2319DS-T1-GE3-VB
Model NameVBsemi Elec SI2319DS-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 5.6A 55mΩ@10V,4.4A 2.5W 2V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.054 grams / 0.001905 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)5.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)55mΩ@10V,4.4A
Power Dissipation (Pd)2.5W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSPChannel

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