SI2324DS-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SI2324DS-T1-GE3-VB is a SI2324DS-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 2A 2.5W 240mΩ@10V,1.5A 2.8V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 2A
  • Power Dissipation (Pd): 2.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 240mΩ@10V,1.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.8V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.054 grams.

More on SI2324DS-T1-GE3-VB

Full Specifications of SI2324DS-T1-GE3-VB

Model NumberSI2324DS-T1-GE3-VB
Model NameVBsemi Elec SI2324DS-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 2A 2.5W 240mΩ@10V,1.5A 2.8V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.054 grams / 0.001905 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)2A
Power Dissipation (Pd)2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)240mΩ@10V,1.5A
Gate Threshold Voltage (Vgs(th)@Id)2.8V@250uA
Type1PCSNChannel

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