Si2377EDS-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec Si2377EDS-T1-GE3-VB is a Si2377EDS-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 5.6A 2.5W 46mΩ@10V 1PCSPChannel SOT23 MOSFETs ROHS. This product comes in a SOT23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 5.6A
  • Power Dissipation (Pd): 2.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 46mΩ@10V
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.042 grams.

More on Si2377EDS-T1-GE3-VB

Full Specifications of Si2377EDS-T1-GE3-VB

Model NumberSi2377EDS-T1-GE3-VB
Model NameVBsemi Elec Si2377EDS-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 5.6A 2.5W 46mΩ@10V 1PCSPChannel SOT23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.042 grams / 0.001482 oz
Package / CaseSOT23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)5.6A
Power Dissipation (Pd)2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)46mΩ@10V
Type1PCSPChannel

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