VBsemi Elec SI3430DV-VB is a SI3430DV-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 3.2A 95mΩ@10V,3A 2.8W 2.5V@250uA 1PCSNChannel TSOP-6-1.5mm MOSFETs ROHS. This product comes in a TSOP-6-1.5mm package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 3.2A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 95mΩ@10V,3A
- Power Dissipation (Pd): 2.8W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.053 grams.
More on SI3430DV-VB
Full Specifications of SI3430DV-VB
| Model Number | SI3430DV-VB |
| Model Name | VBsemi Elec SI3430DV-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 3.2A 95mΩ@10V,3A 2.8W 2.5V@250uA 1PCSNChannel TSOP-6-1.5mm MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.053 grams / 0.00187 oz |
| Package / Case | TSOP-6-1.5mm |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 3.2A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 95mΩ@10V,3A |
| Power Dissipation (Pd) | 2.8W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 1PCSNChannel |