SI3456DDV-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SI3456DDV-T1-GE3-VB is a SI3456DDV-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 6A 2.5W 23mΩ@10V,5.5A 1PCSNChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6A
  • Power Dissipation (Pd): 2.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@10V,5.5A
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.048 grams.

More on SI3456DDV-T1-GE3-VB

Full Specifications of SI3456DDV-T1-GE3-VB

Model NumberSI3456DDV-T1-GE3-VB
Model NameVBsemi Elec SI3456DDV-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 6A 2.5W 23mΩ@10V,5.5A 1PCSNChannel TSOP-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.048 grams / 0.001693 oz
Package / CaseTSOP-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6A
Power Dissipation (Pd)2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)23mΩ@10V,5.5A
Type1PCSNChannel

Compare VBsemi Elec - SI3456DDV-T1-GE3-VB With Other 200 Models

Related Models - SI3456DDV-T1-GE3-VB Alternative

Scroll to Top