SI3457CDV-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SI3457CDV-T1-GE3-VB is a SI3457CDV-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 4.8A 49mΩ@10V 3W 1PCSPChannel TSOP-6 MOSFETs ROHS. This product comes in a TSOP-6 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 49mΩ@10V
  • Power Dissipation (Pd): 3W
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.049 grams.

More on SI3457CDV-T1-GE3-VB

Full Specifications of SI3457CDV-T1-GE3-VB

Model NumberSI3457CDV-T1-GE3-VB
Model NameVBsemi Elec SI3457CDV-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 4.8A 49mΩ@10V 3W 1PCSPChannel TSOP-6 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.049 grams / 0.001728 oz
Package / CaseTSOP-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)49mΩ@10V
Power Dissipation (Pd)3W
Type1PCSPChannel

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