SI4410DY-T1-VB by VBsemi Elec – Specifications

VBsemi Elec SI4410DY-T1-VB is a SI4410DY-T1-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 13A 4.1W 8mΩ@10V 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 13A
  • Power Dissipation (Pd): 4.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.147 grams.

More on SI4410DY-T1-VB

Full Specifications of SI4410DY-T1-VB

Model NumberSI4410DY-T1-VB
Model NameVBsemi Elec SI4410DY-T1-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 13A 4.1W 8mΩ@10V 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.147 grams / 0.005185 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)13A
Power Dissipation (Pd)4.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel

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