SI4425DY-T1-E3&-11-VB by VBsemi Elec – Specifications

VBsemi Elec SI4425DY-T1-E3&-11-VB is a SI4425DY-T1-E3&-11-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 11.6A 5.6W 12.5mΩ@10V,10A 3V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 11.6A
  • Power Dissipation (Pd): 5.6W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12.5mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.138 grams.

More on SI4425DY-T1-E3&-11-VB

Full Specifications of SI4425DY-T1-E3&-11-VB

Model NumberSI4425DY-T1-E3&-11-VB
Model NameVBsemi Elec SI4425DY-T1-E3&-11-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 11.6A 5.6W 12.5mΩ@10V,10A 3V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.138 grams / 0.004868 oz
Package / CaseSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)11.6A
Power Dissipation (Pd)5.6W
Drain Source On Resistance (RDS(on)@Vgs,Id)12.5mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSPChannel

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