SI4447ADY-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SI4447ADY-T1-GE3-VB is a SI4447ADY-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 40V 16.1A 10mΩ@10V 6.3W 1PCSPChannel SOP8 MOSFETs ROHS. This product comes in a SOP8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 16.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V
  • Power Dissipation (Pd): 6.3W
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.134 grams.

More on SI4447ADY-T1-GE3-VB

Full Specifications of SI4447ADY-T1-GE3-VB

Model NumberSI4447ADY-T1-GE3-VB
Model NameVBsemi Elec SI4447ADY-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description40V 16.1A 10mΩ@10V 6.3W 1PCSPChannel SOP8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.134 grams / 0.004727 oz
Package / CaseSOP8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)16.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@10V
Power Dissipation (Pd)6.3W
Type1PCSPChannel

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