SI4463BDY-T1-VB by VBsemi Elec – Specifications

VBsemi Elec SI4463BDY-T1-VB is a SI4463BDY-T1-VB from VBsemi Elec, part of the MOSFETs. It is designed for 20V 13A 19W 18mΩ@4.5V,5.6A 1.2V@250uA 1PCSPChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 13A
  • Power Dissipation (Pd): 19W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@4.5V,5.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.14 grams.

More on SI4463BDY-T1-VB

Full Specifications of SI4463BDY-T1-VB

Model NumberSI4463BDY-T1-VB
Model NameVBsemi Elec SI4463BDY-T1-VB
CategoryMOSFETs
BrandVBsemi Elec
Description20V 13A 19W 18mΩ@4.5V,5.6A 1.2V@250uA 1PCSPChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.140 grams / 0.004938 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)13A
Power Dissipation (Pd)19W
Drain Source On Resistance (RDS(on)@Vgs,Id)18mΩ@4.5V,5.6A
Gate Threshold Voltage (Vgs(th)@Id)1.2V@250uA
Type1PCSPChannel

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