SI4466DY-T1-VB by VBsemi Elec – Specifications

VBsemi Elec SI4466DY-T1-VB is a SI4466DY-T1-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 18A 4mΩ@10V,11A 4.5W 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@10V,11A
  • Power Dissipation (Pd): 4.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.25 grams.

More on SI4466DY-T1-VB

Full Specifications of SI4466DY-T1-VB

Model NumberSI4466DY-T1-VB
Model NameVBsemi Elec SI4466DY-T1-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 18A 4mΩ@10V,11A 4.5W 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.250 grams / 0.008819 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)4mΩ@10V,11A
Power Dissipation (Pd)4.5W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel

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