SI4948BEY-T1-E3-VB by VBsemi Elec – Specifications

VBsemi Elec SI4948BEY-T1-E3-VB is a SI4948BEY-T1-E3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 2.4A 12mΩ@10V,3.1A 1.4W 3V@250uA 2 P-Channel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 2.4A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,3.1A
  • Power Dissipation (Pd): 1.4W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 2 P-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.14 grams.

More on SI4948BEY-T1-E3-VB

Full Specifications of SI4948BEY-T1-E3-VB

Model NumberSI4948BEY-T1-E3-VB
Model NameVBsemi Elec SI4948BEY-T1-E3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 2.4A 12mΩ@10V,3.1A 1.4W 3V@250uA 2 P-Channel SOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.140 grams / 0.004938 oz
Package / CaseSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)2.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@10V,3.1A
Power Dissipation (Pd)1.4W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type2 P-Channel

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