VBsemi Elec SI4953ADY-T1-E3-VB is a SI4953ADY-T1-E3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 7.3A 5W 35mΩ@10V,6.3A 3V@250uA 2 P-Channel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 7.3A
- Power Dissipation (Pd): 5W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@10V,6.3A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 2 P-Channel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.32 grams.
More on SI4953ADY-T1-E3-VB
Full Specifications of SI4953ADY-T1-E3-VB
Model Number | SI4953ADY-T1-E3-VB |
Model Name | VBsemi Elec SI4953ADY-T1-E3-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 30V 7.3A 5W 35mΩ@10V,6.3A 3V@250uA 2 P-Channel SOP-8 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.320 grams / 0.011288 oz |
Package / Case | SOP-8 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 7.3A |
Power Dissipation (Pd) | 5W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 35mΩ@10V,6.3A |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Type | 2 P-Channel |
Compare VBsemi Elec - SI4953ADY-T1-E3-VB With Other 200 Models
- SI4953ADY-T1-E3-VB vs NTGD1100LT1G-VB
- SI4953ADY-T1-E3-VB vs FQD7P06TM-VB
- SI4953ADY-T1-E3-VB vs IRFB7437PBF-VB
- SI4953ADY-T1-E3-VB vs FDC655BN-VB
- SI4953ADY-T1-E3-VB vs FQD7N10LTM-VB
- SI4953ADY-T1-E3-VB vs IRFTS9342TRPBF-VB
- SI4953ADY-T1-E3-VB vs NCE6020AK-VB
- SI4953ADY-T1-E3-VB vs RFP50N06-VB
- SI4953ADY-T1-E3-VB vs RFP12N10L-VB
- SI4953ADY-T1-E3-VB vs FDC638APZ-VB