SI7366DP-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SI7366DP-T1-GE3-VB is a SI7366DP-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 7mΩ@10V 820mV 1PCSNChannel DFN-8(5x6) MOSFETs ROHS. This product comes in a DFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@10V
• Gate Threshold Voltage (Vgs(th)@Id): 820mV
• Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.105 grams.