SI7483ADP-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SI7483ADP-T1-GE3-VB is a SI7483ADP-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 120A 110W 4mΩ@10V 1PCSPChannel QFN-8(5x6) MOSFETs ROHS. This product comes in a QFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 120A
  • Power Dissipation (Pd): 110W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@10V
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.17 grams.

More on SI7483ADP-T1-GE3-VB

Full Specifications of SI7483ADP-T1-GE3-VB

Model NumberSI7483ADP-T1-GE3-VB
Model NameVBsemi Elec SI7483ADP-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 120A 110W 4mΩ@10V 1PCSPChannel QFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.170 grams / 0.005997 oz
Package / CaseQFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)120A
Power Dissipation (Pd)110W
Drain Source On Resistance (RDS(on)@Vgs,Id)4mΩ@10V
Type1PCSPChannel

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