SI9435BDY-T1-E3-VB by VBsemi Elec – Specifications

VBsemi Elec SI9435BDY-T1-E3-VB is a SI9435BDY-T1-E3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 4.1A 42mΩ@10V,5.8A 1.3W 2V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.1A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 42mΩ@10V,5.8A
  • Power Dissipation (Pd): 1.3W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.135 grams.

More on SI9435BDY-T1-E3-VB

Full Specifications of SI9435BDY-T1-E3-VB

Model NumberSI9435BDY-T1-E3-VB
Model NameVBsemi Elec SI9435BDY-T1-E3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 4.1A 42mΩ@10V,5.8A 1.3W 2V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.135 grams / 0.004762 oz
Package / CaseSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)4.1A
Drain Source On Resistance (RDS(on)@Vgs,Id)42mΩ@10V,5.8A
Power Dissipation (Pd)1.3W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSPChannel

Compare VBsemi Elec - SI9435BDY-T1-E3-VB With Other 200 Models

Related Models - SI9435BDY-T1-E3-VB Alternative

Scroll to Top