SiA444DJT-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SiA444DJT-T1-GE3-VB is a SiA444DJT-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 6A 2.5W 23mΩ@10V,5.5A 1PCSNChannel SC-70-6L MOSFETs ROHS. This product comes in a SC-70-6L package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6A
  • Power Dissipation (Pd): 2.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@10V,5.5A
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.024 grams.

More on SiA444DJT-T1-GE3-VB

Full Specifications of SiA444DJT-T1-GE3-VB

Model NumberSiA444DJT-T1-GE3-VB
Model NameVBsemi Elec SiA444DJT-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 6A 2.5W 23mΩ@10V,5.5A 1PCSNChannel SC-70-6L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.024 grams / 0.000847 oz
Package / CaseSC-70-6L
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)6A
Power Dissipation (Pd)2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)23mΩ@10V,5.5A
Type1PCSNChannel

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