SiA910EDJ-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SiA910EDJ-T1-GE3-VB is a SiA910EDJ-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 33mΩ@10V 400mV 2 N-Channel DFN-6(2x2) MOSFETs ROHS. This product comes in a DFN-6(2x2) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 400mV
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.016 grams.

More on SiA910EDJ-T1-GE3-VB

Full Specifications of SiA910EDJ-T1-GE3-VB

Model NumberSiA910EDJ-T1-GE3-VB
Model NameVBsemi Elec SiA910EDJ-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 33mΩ@10V 400mV 2 N-Channel DFN-6(2x2) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.016 grams / 0.000564 oz
Package / CaseDFN-6(2x2)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Drain Source On Resistance (RDS(on)@Vgs,Id)33mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)400mV
Type2 N-Channel

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